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data sheet, rev. 2.0, may 2006 never stop thinking. bts 7970b high current pn half bridge novalithic 68 a, 7 m ? + 9 m ? typ. automotive power tm
high current pn half bridge bts 7970b data sheet 1 rev. 2.0, 2006-05-09 product summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 basic features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1.1 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1.2 terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 2 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 2.1 pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 2.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 maximum single pulse current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 1 block description and characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 1.1 supply characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 1.2 power stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 1.2.1 power stages - static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 1.2.2 switching times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1.2.3 power stages - dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . 12 1.3 protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 1.3.1 overvoltage lock out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 1.3.2 undervoltage shut down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 1.3.3 overtemperature protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 1.3.4 current limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 1.3.5 short circuit protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 1.3.6 electrical characteristics - protection functions . . . . . . . . . . . . . . . . . . . 17 1.4 control and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 1.4.1 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 1.4.2 dead time generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 1.4.3 adjustable slew rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 1.4.4 status flag diagnosis with current sense capability . . . . . . . . . . . . . . 18 1.4.5 truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 1.4.6 electrical characteristics - control and diagnostics . . . . . . . . . . . . . . . . 21 2 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 3 application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 3.1 application example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 3.2 layout considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 4 package outlines p-to-263-7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
data sheet 2 rev. 2.0, 2006-05-09 type package bts 7970b p-to-263-7 high current pn half bridge novalithic bts 7970b product summary the bts 7970b is a fully integrated high current half bridge for motor drive applications. it is part of the novalithic tm family containing one p-channel highside mosfet and one n-channel lowside mosfet with an integrated driver ic in one package. due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing emi. interfacing to a microcontroller is made easy by the integrated driver ic which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. the bts 7970b provides a cost optimized solution for protected high current pwm motor drives with very low board space consumption. basic features ? path resistance of typ. 16 m ? @25 c low quiescent current of typ. 7 a @ 25 c pwm capability of up to 25 khz combined with active freewheeling switched mode current limitation for reduced power dissipation in overcurrent current limitation level of 68 a typ. / 50 a min. status flag diagnosis with current sense capability overtemperature shut down with latch behaviour overvoltage lock out undervoltage shut down driver circuit with logic level inputs adjustable slew rates for optimized emi bts 7970b p-to-263-7 tm
high current pn half bridge bts 7970b overview data sheet 3 rev. 2.0, 2006-05-09 1overview the bts 7970b is part of the novalithic ? family containing three separate chips in one package: one p-channel highside mosfet and one n-channel lowside mosfet together with a driver ic, forming a fully integrated high current half-bridge. all three chips are mounted on one common leadframe, using the chip on chip and chip by chip technology. the power switches utilize vertical mos technologies to ensure optimum on state resistance. due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing emi. interfacing to a microcontroller is made easy by the integrated driver ic which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. the bts 7970b can be combined with other bts 7970b to form h-bridge and 3-phase drive configurations. 1.1 block diagram figure 1 block diagram is sr top-chip inh in gnd out ls base-chip vs hs base-chip gate driver dead time gen. slew rate adj. uv shut down ov lock out ot shut down current lim. diagnosis current sense bts 7970b
high current pn half bridge bts 7970b overview data sheet 4 rev. 2.0, 2006-05-09 1.2 terms following figure shows the terms used in this data sheet. figure 2 terms i in v in out i inh v inh v sr i sr v is i is v vs ,v s i out , i l v out v ds(hs) gnd i gnd, i d(ls) i vs , -i d(hs) in inh sr is vs v sd (l s) bts 7970b
high current pn half bridge bts 7970b pin configuration data sheet 5 rev. 2.0, 2006-05-09 2 pin configuration 2.1 pin assignment figure 3 pin assignment bts 7970b and (top view) 2.2 pin definitions and functions bold type: pin needs power wiring pin symbol i/o function 1 gnd - ground 2 in i input defines whether high- or lowside switch is activated 3 inh i inhibit when set to low device goes in sleep mode 4,8 out o power output of the bridge 5 sr i slew rate the slew rate of the power switches can be adjusted by connecting a resistor between sr and gnd 6 is o current sense and diagnosis 7 vs - supply 1 2 35 6 7 4 8 bts 7970b p-to-263-7
high current pn half bridge bts 7970b maximum ratings data sheet 6 rev. 2.0, 2006-05-09 3 maximum ratings note: maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the device. exposure to maximum rating conditions for extended periods of time may affect device reliability -40 c < t j < 150 c (unless otherwise specified) pos parameter symbol limits unit test condition min max electrical maximum ratings 3.0.1 supply voltage v vs -0.3 45 v 3.0.2 logic input voltage v in v inh -0.3 5.3 v 3.0.3 hs/ls continuous drain current i d(hs) i d(ls) -44 44 1) 1) maximum reachable current may be smaller depending on current limitation level a t c < 85c switch active 3.0.4 hs pulsed drain current i d(hs) -90 90 1) a t c < 85c t pulse = 10ms single pulse 3.0.5 ls pulsed drain current i d(ls) -90 90 1) a 3.0.6 pwm current i out 1) -55 55 a f = 1khz, dc = 50% -60 60 a f = 20khz, dc = 50% 3.0.7 voltage at sr pin v sr -0.3 1.0 v 3.0.8 voltage between vs and is pin v vs - v is -0.3 45 v 3.0.9 voltage at is pin v is -20 45 v thermal maximum ratings 3.0.10 junction temperature t j -40 150 c 3.0.11 storage temperature t stg -55 150 c esd susceptibility 3.0.12 esd susceptibility in, inh, sr, is out, gnd, vs v esd -2 -6 2 6 kv hbm 2) 2) esd susceptibility hbm according to eia/jesd 22-a 114b
high current pn half bridge bts 7970b maximum ratings data sheet 7 rev. 2.0, 2006-05-09 maximum single pulse current figure 4 bts 7970b maximum single pulse current this diagram shows the maximum single pulse current that can be driven for a given pulse time t pulse . the maximum reachable current may be smaller depending on the current limitation level. pulse time may be limited due to thermal protection of the device. 0 10 20 30 40 50 60 70 80 90 100 1,0e-03 1,0e-02 1,0e-01 1,0e+00 1,0e+01 t pulse [s] i max [a]
high current pn half bridge bts 7970b block description and characteristics data sheet 8 rev. 2.0, 2006-05-09 4 block description and characteristics 4.1 supply characteristics figure 5 quiescent current (typ.) vs. junction temperature ? 40 c < t j < 150 c, 8 v < v s < 18 v, i l = 0a (unless otherwise specified) pos. parameter symbol limit values unit test conditions min. typ. max. general 4.1.1 operating voltage v s 5.5 ? 28 v v s increasing 4.1.2 supply current i vs(on) ?23ma v inh = 5 v v in = 0 v or 5 v r sr =0 ? dc-mode normal operation (no fault condition) 4.1.3 quiescent current i vs(off) ?715a v inh = 0 v v in = 0 v or 5 v t j <85 c ??65a v inh = 0 v v in = 0 v or 5 v 0 5 10 15 20 25 -40 0 40 80 120 160 t i vs(of f) [a] [c]
high current pn half bridge bts 7970b block description and characteristics data sheet 9 rev. 2.0, 2006-05-09 4.2 power stages the power stages of the bts 7970b consist of a p-channel vertical dmos transistor for the high side switch and a n-channel vertical dmos transistor for the low side switch. all protection and diagnostic functions are located in a separate top chip. both switches can be operated up to 25 khz, allowing active freewheeling and thus minimizing power dissipation in the forward operation of the integrated diodes. the on state resistance r on is dependent on the supply voltage v s as well as on the junction temperature t j . the typical on state resistance characteristics are shown in figure 6 . figure 6 typical on state resistance vs. supply voltage 5 10 15 20 25 4 8 12 16 20 24 28 v s r on(hs) m ? v t j = 150c t j = 25c t j = -40c high side switch 5 10 15 20 25 4 8 12 16 20 24 28 v s r on(ls) m ? v t j = 150c t j = 25c t j = -40c low side switch
high current pn half bridge bts 7970b block description and characteristics data sheet 10 rev. 2.0, 2006-05-09 4.2.1 power stages - static characteristics ? 40 c < t j < 150 c, 8 v < v s < 18 v (unless otherwise specified) pos. parameter symbol limit values unit test conditions min. typ. max. high side switch - static characteristics 4.2.1 on state high side resistance r on(hs) ? ? 7 10 9 12.5 m ? i out = 20 a v s = 13.5 v t j = 25 c t j = 150 c 4.2.2 leakage current high side i l(lkhs) ??1a v inh = 0 v v out = 0 v t j < 85 c ? ? 50 a v inh = 0 v v out = 0 v t j = 150 c 4.2.3 reverse diode forward-voltage high side 1) 1) due to active freewheeling, diode is conducting only for a few s, depending on r sr v ds(hs) ? ? ? 0.9 0.8 0.6 1.5 1.1 0.8 v i out =-9a t j = -40 c t j = 25 c t j = 150 c low side switch - static characteristics 4.2.4 on state low side resistance r on(ls) ? ? 9 14 12 18 m ? i out =-20a v s = 13.5v t j = 25 c t j = 150 c 4.2.5 leakage current low side i l(lkls) ??1a v inh = 0 v v out = v s t j < 85 c ? ? 15 a v inh = 0 v v out = v s t j = 150 c 4.2.6 reverse diode forward-voltage low side 1) v sd(ls) ? ? ? 0.9 0.8 0.6 1.5 1.1 0.8 v i out = 9 a t j = -40 c t j = 25 c t j = 150 c
high current pn half bridge bts 7970b block description and characteristics data sheet 11 rev. 2.0, 2006-05-09 4.2.2 switching times figure 7 definition of switching times high side (r load to gnd) figure 8 definition of switching times low side (r load to vs) due to the timing differences for the rising and the falling edge there will be a slight difference between the length of the input pulse and the length of the output pulse. it can be calculated using the following formulas: ? t hs = ( t dr(hs) + 0.5 t r(hs) ) - ( t df(hs) + 0.5 t f(hs) ) ? t ls = ( t df(ls) + 0.5 t f(ls) ) - ( t dr(ls) + 0.5 t r(ls) ). in v out t t 90% 10% ? v out 90% 10% t dr(hs) t r(hs) t df(hs) t f(hs) ? v out in v out t t 90% 10% 90% 10% ? v out t df(ls) t f(ls) ? v out t dr(ls) t r(ls)
high current pn half bridge bts 7970b block description and characteristics data sheet 12 rev. 2.0, 2006-05-09 4.2.3 power stages - dynamic characteristics -40 c < t j < 150 c, v s = 13.5 v, r load = 2 ? (unless otherwise specified) pos. parameter symbol limit values unit test conditions min. typ. max. high side switch dynamic characteristics 4.2.7 rise-time of hs t r(hs) 0.5 ? 2 1 2 6 1.5 ? 11 s r sr = 0 ? r sr = 5.1 k ? r sr = 51 k ? 4.2.8 slew rate hs on ? v out / t r( hs) ? ? ? 11 6 1.6 ? ? ? v/s r sr = 0 ? r sr = 5.1 k ? r sr = 51 k ? 4.2.9 switch on delay time hs t dr(hs) 1.7 ? 5.6 3.1 4.4 14 4.3 ? 22.4 s r sr = 0 ? r sr = 5.1 k ? r sr = 51 k ? 4.2.10 fall-time of hs t f(hs) 0.5 ? 2 1 2 6 1.5 ? 11 s r sr = 0 ? r sr = 5.1 k ? r sr = 51 k ? 4.2.11 slew rate hs off - ? v out / t f(hs) ? ? ? 11 6 1.6 ? ? ? v/s r sr = 0 ? r sr = 5.1 k ? r sr = 51 k ? 4.2.12 switch off delay time hs t df(hs) 1.2 ? 4 2.4 3.4 10 3.2 ? 16 s r sr = 0 ? r sr = 5.1 k ? r sr = 51 k ?
high current pn half bridge bts 7970b block description and characteristics data sheet 13 rev. 2.0, 2006-05-09 low side switch dynamic characteristics 4.2.13 rise-time of ls t r(ls) 0.5 ? 2 1 2 6 1.5 ? 11 s r sr = 0 ? r sr = 5.1 k ? r sr = 51 k ? 4.2.14 slew rate ls switch off ? v out / t r(ls) ? ? ? 11 6 1.6 ? ? ? v/s r sr = 0 ? r sr = 5.1 k ? r sr = 51 k ? 4.2.15 switch off delay time ls t dr(ls) 0.6 ? 2.6 1.3 2.2 7 1.9 ? 11 s r sr = 0 ? r sr = 5.1 k ? r sr = 51 k ? 4.2.16 fall-time of ls t f(ls) 0.5 ? 2 1 2 6 1.5 ? 11 s r sr = 0 ? r sr = 5.1 k ? r sr = 51 k ? 4.2.17 slew rate ls switch on - ? v out / t f(ls) ? ? ? 11 6 1.6 ? ? ? v/s r sr = 0 ? r sr = 5.1 k ? r sr = 51 k ? 4.2.18 switch on delay time ls t df(ls) 2.3 ? 6.4 3.6 5.6 16 5.0 ? 25.4 s r sr = 0 ? r sr = 5.1 k ? r sr = 51 k ? -40 c < t j < 150 c, v s = 13.5 v, r load = 2 ? (unless otherwise specified) pos. parameter symbol limit values unit test conditions min. typ. max.
high current pn half bridge bts 7970b block description and characteristics data sheet 14 rev. 2.0, 2006-05-09 4.3 protection functions the device provides integrated protection functions. these are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating rang e. protection functions are not to be used for continuous or repetitive operation, with the exception of the current limitation ( chapter 4.3.4 ). in a fault condition the bts 7970b will apply the highest slew rate possible independent of the connected slew rate resistor. overvoltage, overtemperature and overcurrent are indicated by a fault current i is(lim) at the is pin as described in the paragraph ?status flag diagnosis with current sense capability? on page 18 and figure 12 . in the following the protection functions are listed in order of their priority. overvoltage lock out overrides all other error modes. 4.3.1 overvoltage lock out to assure a high immunity against overvoltages (e.g. load dump conditions) the device shuts the lowside mosfet off and turns the highside mosfet on, if the supply voltage is exceeding the over voltage protection level v ov(off) . the ic operates in normal mode again with a hysteresis v ov(hy) if the supply voltage decreases below the switch-on voltage v ov(on) . in h-bridge configuration, this behavior of the bts 7970b will lead to freewheeling in highside during over voltage. 4.3.2 undervoltage shut down to avoid uncontrolled motion of the driven motor at low voltages the device shuts off (output is tri-state), if the supply voltage drops below the switch-off voltage v uv(off) . the ic becomes active again with a hysteresis v uv(hy) if the supply voltage rises above the switch-on voltage v uv(on) . 4.3.3 overtemperature protection the bts 7970b is protected against overtemperature by an integrated temperature sensor. overtemperature leads to a shut down of both output stages. this state is latched until the device is reset by a low signal with a minimum length of t reset at the inh pin, provided that its temperature has decreased at least the thermal hysteresis ? t in the meantime. repetitive use of the overtemperature protection might reduce lifetime. 4.3.4 current limitation the current in the bridge is measured in both switches. as soon as the current in forward direction in one switch (high side or low side) is reaching the limit i clx , this switch is deactivated and the other switch is activated for t cls . during that time all changes at the
high current pn half bridge bts 7970b block description and characteristics data sheet 15 rev. 2.0, 2006-05-09 in pin are ignored. however, the inh pin can still be used to switch both mosfets off. after t cls the switches return to their initial setting. the error signal at the is pin is reset after 2 * t cls . unintentional triggering of the current limitation by short current spikes (e.g. inflicted by emi coming from the motor) is suppressed by internal filter circuitry. due to thresholds and reaction delay times of the filter circuitry the effective current limitation level i clx depends on the slew rate of the load current d i /d t as shown in figure 10 figure 9 timing diagram current limitation (inductive load) figure 10 current limitation level vs. current slew rate di/dt i l t i clx t cls i clx0 di l /dt i cll [a] [a/ms] t j = 150c t j = - 40c 50 60 70 80 90 0 500 1000 1500 2000 t j = 25c i cll0 di l /dt i clh [a] [a/ms] 50 55 60 65 70 75 80 85 90 0 500 1000 1500 2000 i clh0 t j = 25c t j = 150c t j = - 40c low sideswitch high side switch
high current pn half bridge bts 7970b block description and characteristics data sheet 16 rev. 2.0, 2006-05-09 figure 11 typical current limitation detection levels vs. supply voltage in combination with a typical inductive load, such as a motor, this results in a switched mode current limitation. that way of limiting the current has the advantage that the power dissipation in the bts 7970b is much smaller than by driving the mosfets in linear mode. therefore it is possible to use the current limitation for a short time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor start up). however, the regular use of the current limitation is allowed only as long as the specified maximum junction temperature is not exceeded. exceeding this temperature can reduce the lifetime of the device. 4.3.5 short circuit protection the device is short circuit protected against output short circuit to ground output short circuit to supply voltage short circuit of load the short circuit protection is realized by the previously described current limitation in combination with the over-temperature shut down of the device. please note: due to the higher priority of the overvoltage protection the short circuit protection is inactive in overvoltage conditions. 60 65 70 75 80 6 8 10 12 14 16 18 2 0 v s i clh a v t j = 150c t j = -40c high side switch t j = 25c 60 65 70 75 80 6 8 10 12 14 16 18 2 0 v s i cll a v t j = 150c t j = 25c t j = -40c low side switch
high current pn half bridge bts 7970b block description and characteristics data sheet 17 rev. 2.0, 2006-05-09 4.3.6 electrical characteristics - protection functions ? 40 c < t j < 150 c; 8 v < v s < 18 v (unless otherwise specified) pos. parameter symbol limit values unit test conditions min. typ. max. under voltage shut down 4.3.1 switch-on voltage v uv(on) ??5.5v v s increasing 4.3.2 switch-off voltage v uv(off) 4.0 ? 5.4 v v s decreasing 4.3.3 on/off hysteresis v uv(hy) ?0.2?v ? over voltage lock out 4.3.4 switch-on voltage v ov(on) 27.8 ? ? v v s decreasing 4.3.5 switch-off voltage v ov(off) 28 ? 30 v v s increasing 4.3.6 on/off hysteresis v ov(hy) ?0.2?v ? current limitation 4.3.7 current limitation detection level high side i clh0 54 ? 50 76 73 70 98 ? 90 a v s =13.5 v t j = -40 c t j = 25 c t j = 150 c 4.3.8 current limitation detection level low side i cll0 54 ? 50 71 68 65 90 ? 82 a v s =13.5v t j = -40 c t j = 25 c t j = 150 c current limitation timing 4.3.9 shut off time for hs and ls t cls 70 115 210 s v s =13.5v thermal shut down 4.3.10 thermal shut down junction temperature t jsd 155 175 200 c? 4.3.11 thermal switch on junction temperature t jso 150 ? 190 c? 4.3.12 thermal hysteresis ? t ?7?k? 4.3.13 reset pulse at inh pin (inh low) t reset 4??s?
high current pn half bridge bts 7970b block description and characteristics data sheet 18 rev. 2.0, 2006-05-09 4.4 control and diagnostics 4.4.1 input circuit the control inputs in and inh consist of ttl/cmos compatible schmitt triggers with hysteresis which control the integrated gate drivers for the mosfets. setting the inh pin to high enables the device. in this condition one of the two power switches is switched on depending on the status of the in pin. to deactivate both switches, the inh pin has to be set to low. no external driver is needed. the bts 7970b can be interfaced directly to a microcontroller. 4.4.2 dead time generation in bridge applications it has to be assured that the highside and lowside mosfet are not conducting at the same time, connecting directly the battery voltage to gnd. this is assured by a circuit in the driver ic, generating a so called dead time between switching off one mosfet and switching on the other. the dead time generated in the driver ic is automatically adjusted to the selected slew rate. 4.4.3 adjustable slew rate in order to optimize electromagnetic emission, the switching speed of the mosfets is adjustable by an external resistor. the slew rate pin sr allows the user to optimize the balance between emission and power dissipation within his own application by connecting an external resistor r sr to gnd. 4.4.4 status flag diagnosis with current sense capability the status pin is is used as a combined current sense and error flag output. in normal operation (current sense mode), a current source is connected to the status pin, which delivers a current proportional to the forward load current flowing through the active high side switch. if the high side switch is inactive or the current is flowing in the reverse direction no current will be driven except for a marginal leakage current i is(lk) . the external resistor r is determines the voltage per output current. e.g. with the nominal value of 19500 for the current sense ratio k ilis = i l / i is , a resistor value of r is = 1k ? leads to v is = ( i l / 19.5 a )v. due to the good long term stability and the low temperature coefficient it is possible to improve the absolute current sense accuracy in the application by calibration. for best results it is recommended to do a two-point calibration. in case of a fault condition the status output is connected to a current source which is independent of the load current and provides i is(lim) . the maximum voltage at the is pin is determined by the choice of the external resistor and the supply voltage. in case of current limitation the i is(lim) is activated for 2 * t cls .
high current pn half bridge bts 7970b block description and characteristics data sheet 19 rev. 2.0, 2006-05-09 figure 12 sense current and fault current figure 13 sense current vs. load current normal operation: current sense mode fault condition: error flag mode vs r is i is ~ i load esd-zd v is sense output logic is r is is v is i is(lim) i is(lim) vs esd-zd sense output logic i l [a] i is(lim) i is [ma] i cll / i clh error flag mode l o w e r k i l i s v a l u e h i g h e r k i l i s v a l u e current sense mode
high current pn half bridge bts 7970b block description and characteristics data sheet 20 rev. 2.0, 2006-05-09 4.4.5 truth table device state inputs outputs mode inh in hss lss is normal operation 0 x off off 0 stand-by mode 1 0 off on 0 lss active 1 1 on off cs hss active over-voltage (ov) x x on off 1 shut-down of lss, hss activated, error detected under-voltage (uv) x x off off 0 uv lockout overtemperature (ot) 0 x off off 0 stand-by mode, reset of latch 1 x off off 1 shut-down with latch, error detected current limitation 1 1 off on 1 switched mode, error detected 1) 1) will return to normal operation after t cls ; error signal is reset after 2*t cls (see chapter 4.3.4 ) 1 0 on off 1 switched mode , error detected 1) inputs: switches status flag is: 0 = logic low off = switched off cs = current sense mode 1 = logic high on = switched on 1 = logic high (error) x = 0 or 1
high current pn half bridge bts 7970b block description and characteristics data sheet 21 rev. 2.0, 2006-05-09 4.4.6 electrical characteristics - control and diagnostics ? 40 c < t j < 150 c, 8 v < v s < 18 v (unless otherwise specified) pos. parameter symbol limit values unit test conditions min. typ. max. control inputs (in and inh) 4.4.1 high level voltage inh, in v inh(h) v in(h) ?1.75 1.6 2.15 2 v? 4.4.2 low level voltage inh, in v inh(l) v in(l) 1.1 1.4 ? v ? 4.4.3 input voltage hysteresis v inhhy v inhy ? ? 350 200 ? ? mv ? 4.4.4 input current i inh(h) i in(h) ? 30 150 a v in = v inh = 5.3 v 4.4.5 input current i inh(l) i in(l) ? 25 125 a v in = v inh =0.4 v current sense 4.4.6 current sense ratio in static on-condition k ilis = i l / i is k ilis 13 12 10 19.5 19.5 19.5 25 26 28 10 3 r is = 1 k ? i l = 40 a i l = 20 a i l = 10 a 4.4.7 maximum analog sense current, sense current in fault condition i is(lim) 456.5ma v s = 13.5 v r is = 1k ? 4.4.8 isense leakage current i isl ??1a v in = 0 v or v inh = 0 v 4.4.9 isense leakage current, active high side switch i ish ?1200a v in = v inh = 5 v i l = 0 a 4.4.10 current sense ratio long term drift 1) 1) not subject to production test, specified by design. dk ilis -1.5 1.5 % q100 qualification 4.4.11 current sense ratio temperature coefficient 1) dk ilis / dt -0.12 -0.025 0.06 %/k i l = 10 a 4.4.12 -0.055 -0.025 0.005 i l = 20 a 4.4.13 -0.05 -0.025 0 i l = 40 a
high current pn half bridge bts 7970b thermal characteristics data sheet 22 rev. 2.0, 2006-05-09 5 thermal characteristics note: thermal characteristics are not subject to production test - specified by design. pos parameter symbol limits unit test condition min max 5.0.1 thermal resistance junction-case, low side switch r thjc(ls) = ? t j(ls) / p v(ls) r thjc(ls) ?1.8k/w 5.0.2 thermal resistance junction-case, high side switch r thjc(hs) = ? t j(hs) / p v(hs) r thjc(hs) ?0.9k/w 5.0.3 thermal resistance junction-case, both switches r thjc = max[ ? t j(hs) , ? t j(ls) ] / ( p v(hs) + p v(ls) ) r thjc ?1.0k/w 5.0.4 thermal resistance junction-ambient r thja ?35k/w6cm 2 cooling area
high current pn half bridge bts 7970b application data sheet 23 rev. 2.0, 2006-05-09 6 application 6.1 application example figure 14 application example: h-bridge with two bts 7970b 6.2 layout considerations due to the fast switching times for high currents, special care has to be taken to the pcb layout. stray inductances have to be minimized in the power bridge design as it is necessary in all switched high power bridges. the bts 7970b has no separate pin for power ground and logic ground. therefore it is recommended to assure that the offset between the ground connection of the slew rate resistor, the current sense resistor and ground pin of the device (gnd / pin 1) is minimized. if the bts 7970b is used in a h- bridge or b6 bridge design, the voltage offset between the gnd pins of the different devices should be small as well. a ceramic capacitor from vs to gnd close to each device is recommended to provide current for the switching phase via a low inductance path and therefore reducing noise and ground bounce. a reasonable value for this capacitor would be about 470 nf. the digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series resistors in the range of 10 k ? . vs out inh in is sr gnd bts 7970b vs out inh in is sr gnd bts 7970b m c tle 4278g v s i/o reset vdd vss wo ro q d gnd i spd 50p03l microcontroller reverse polarity protection voltage regulator high current h-bridge i/o i/o i/o i/o i/o
high current pn half bridge bts 7970b package outlines p-to-263-7 data sheet 24 rev. 2.0, 2006-05-09 7 package outlines p-to-263-7 hlgf1019 10.8 9 . 4 1 6 . 1 5 4 . 6 0.47 0.8 8.42 6.6 7.5 9.9 a 6 . 5 0 . 2 9 . 2 0 . 3 1 1 0 . 2 0 . 1 5 ( 1 4 . 9 ) 0...0.1 5 7 x 0.6 +0.1 -0.03 6 x 1.27 0.25 m ab 0.05 b 1.3 +0.1 -0.02 4.4 0.1 2.4 2 . 7 0 . 5 4 . 7 0 . 5 0 . 1 5 0 . 5 8 m a x . all metal sufaces tin plated, except area of cut . back side, heatsink contour 1) shear and punch direction no burrs this surf ace 0.1 b 1) 17 p-to-263-7 (plastic transistor single outline package) footprint y ou can find all of our packages, sorts of packing and others in our infineon internet page ?products?: http://www.infineon.com/products. dimensions in mm smd = surface mounted device
high current pn half bridge bts 7970b revision history data sheet 25 2006-05-09 8 revision history version date changes / comments rev. 0.1 2005-07-20 target data sheet rev. 1.0 2006-05-04 preliminary data sheet rev. 2.0 2006-05-09 data sheet
edition 2006-05-09 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 5/8/06. all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non- infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. high current pn half bridge bts 7970b data sheet 26 2006-05-09
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